David W. Daniel
19Patents
16h-index
25Co-inventors
78Inventor score
Filing activity: Jan 9, 1978 → Mar 27, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5966599A | Method for fabricating a low trigger voltage silicon controlled rectifier and thick field device | Electricity | 81 | Expired |
| US6355532B1 | Subtractive oxidation method of fabricating a short-length and vertically-oriented channel, dual-gate, CMOS FET | Electricity | 70 | Expired |
| US6077783A | Method and apparatus for detecting a polishing endpoint based upon heat conducted through a semiconductor wafer | Performing Operations; Transporting | 59 | Expired |
| US6096625A | Method for improved gate oxide integrity on bulk silicon | Electricity | 56 | Expired |
| US6241847A | Method and apparatus for detecting a polishing endpoint based upon infrared signals | Electricity | 39 | Expired |
| US6235590A | Fabrication of differential gate oxide thicknesses on a single integrated circuit chip | Electricity | 37 | Expired |
| US6316817A | MeV implantation to form vertically modulated N+ buried layer in an NPN bipolar transistor | Emerging Cross-Sectional Technologies | 37 | Expired |
| US6069048A | Reduction of silicon defect induced failures as a result of implants in CMOS and other integrated circuits | Electricity | 37 | Expired |
| US5858828A | Use of MEV implantation to form vertically modulated N+ buried layer in an NPN bipolar transistor | Emerging Cross-Sectional Technologies | 37 | Expired |
| US4150909A | Breakwater system | Emerging Cross-Sectional Technologies | 35 | Expired |
| US6121147A | Apparatus and method of detecting a polishing endpoint layer of a semiconductor wafer which includes a metallic reporting substance | Electricity | 34 | Expired |
| US6856029B1 | Process independent alignment marks | Emerging Cross-Sectional Technologies | 31 | Expired |
| US6201253A | Method and apparatus for detecting a planarized outer layer of a semiconductor wafer with a confocal optical system | Electricity | 30 | Expired |
| US6354908B2 | Method and apparatus for detecting a planarized outer layer of a semiconductor wafer with a confocal optical system | Electricity | 27 | Expired |
| US6372520B1 | Sonic assisted strengthening of gate oxides | Electricity | 24 | Expired |
| US6870160B1 | Method and apparatus for monitoring the condition of a lubricating medium | Physics | 24 | Expired |
| US6506684B1 | Anti-corrosion system | Electricity | 9 | Expired |
| US7095483B2 | Process independent alignment marks | Emerging Cross-Sectional Technologies | 3 | Expired |
| US11095675B1 | System and method for identifying system vulnerabilities | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.