Method for providing a metallization layer on an insulating layer and for opening through holes in the said insulating layer using the same mask
US5966633A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 9, 1996 |
| Grant date | Oct 12, 1999 |
| Priority date | — |
| Expiry date | Sep 9, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/94
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method for thin film or semiconductor technology, is discussed in which a metallization layer can be provided on an insulating layer, allowing opening of through holes in the insulating layer simultaneously with the same mask. A substrate 1 has a first 3 and a second 4 insulating layer on its surface 2, a cover layer 5 on the second insulating layer 4, a structured mask layer 6 on the cover layer 5, and through openings 7 filled with metal and extending from the rear side of the substrate as far as the substrate surface 2. The mask layer 6 features openings in the areas facing the through openings 7 and in the areas to be covered with a metal layer 8. The cover layer 5 is opened in the areas which are not covered by the structured mask layer 6 by means of a first etching process. Following this, the second insulating layer 4 is laser ablated in the areas facing the filled through openings 7, using dielectric mask. Then, a second etching process simultaneously opens the first insulating layer 3 in the areas facing the filled through openings 7, and the second insulating layer 4 in the areas to be covered with a metal layer 8, whereby the through openings 7 are completely freed fro…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.