SiC semiconductor device comprising a pn junction with a voltage absorbing edge

US5967795A · kind A · utility

Assignee

• Asea Brown Boveri, S.A. · CH

Inventors

• Mietek Bakowsky · Skultuna, SE
• Bo Bijlenga · Skultuna, SE
• Ulf Gustafsson · Linköping, SE
• Christopher Harris · Sollentuna, SE
• Susan Savage · Jokkmokk, SE

Key dates

• Filing date: Aug 30, 1995
• Grant date: Oct 19, 1999
• Expiry date: Aug 30, 2015

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/931

Abstract

A semiconductor component comprises a pn junction in which both the p-conducting and the n-conducting layers of the pn junction are doped silicon carbide layers and the edge of at least one of the conducting layers of the pn junction exhibits a stepwise or uniformly decreasing total charge or effective surface charge density from the initial value at the defined working junction to a zero or almost zero total charge at the outermost edge of the junction following a radial direction from the central part of the junction towards its outermost edge.