Controlled removal of electron beam curable coatings and articles formed thereby
US5968710A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 19, 1998 |
| Grant date | Oct 19, 1999 |
| Priority date | — |
| Expiry date | Feb 19, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides for the controlled rate of removal of common electron beam-curable materials, such as photoresists, from substrates, including silicon wafers in various stages of fabrication, by typical CMP processes and also provides a method of planing or otherwise altering the surface topography of a these substrates. The present invention utilizes typical CMP processes and common electron beam-curable materials to protect the underlying substrate surface from scratching and polishing away during the CMP processing. In addition, because of the ability in the present invention to precisely tailor the etch rates of the electron beam-curable material with that of the underlying substrate, substrates may be formed which have areas of electron beam-curable material which is either convex or concave to the plane of the substrate surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.