Controlled isotropic etch process and method of forming an opening in a dielectric layer
US5968851A · kind A · utility
8Cited by
16References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 19, 1997 |
| Grant date | Oct 19, 1999 |
| Priority date | — |
| Expiry date | Mar 19, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/974
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method of manufacturing an opening through a dielectric layer. The method comprises treating a polished dielectric layer with a wet etch selectively enchancing composition, such as buffered HF, prior to the formation of a patterned photoresist to improve the lateral-to-vertical wet etch ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.