Silicide agglomeration device
US5969404A · kind A · utility
47Cited by
15References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 16, 1997 |
| Grant date | Oct 19, 1999 |
| Priority date | — |
| Expiry date | Jul 16, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fusible link device disposed on a semiconductor substrate for providing discretionary electrical connections. The fusible link device of the invention includes a silicide layer and a polysilicon layer formed on the silicide layer and has a first unprogrammed resistance. The silicide layer agglomerates to form an electrical discontinuity in response to a predetermined programming potential being applied across the silicide layer, such that the resistance of the fusible link device can be selectively increased to a second programmed resistance
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.