High speed gate oxide protected level shifter
US5969542A · kind A · utility
74Cited by
4References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 21, 1997 |
| Grant date | Oct 19, 1999 |
| Priority date | — |
| Expiry date | May 21, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/102
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An improved gate oxide protected level shifter is provided which has a higher speed of operation than is traditionally available. The level shifter includes a first capacitor coupled between a first output terminal and the input of an inverter and a second capacitor coupled between a first node and the output of the inverter. As a result, the speed of the transitions at the gates of the pair of cross-coupled P-channel MOS transistors is increased several times.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.