Ferroelectric memory device
US5969979A · kind A · utility
19Cited by
4References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 25, 1997 |
| Grant date | Oct 19, 1999 |
| Priority date | — |
| Expiry date | Nov 25, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
To present a ferroelectric memory device capable of further decreasing fluctuations of reference potential in reference memory cell system. To achieve the object, the ferroelectric memory device comprises, as shown, for example, in FIG. 1, a reference potential generating circuit in a system for generating a reference potential by averaging the potentials being read out from two ferroelectric capacitors for reference memory cells CD00, CD20 storing data of high level, and two ferroelectric capacitors for reference memory cells CD10, CD30 storing data of low level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.