Method of producing an EEPROM semiconductor structure
US5970338A · kind A · utility
17Cited by
7References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 2, 1998 |
| Grant date | Oct 19, 1999 |
| Priority date | — |
| Expiry date | Mar 2, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/41
Abstract
An EEPROM semiconductor structure is produced with a resistor, a thin-film transistor, a capacitor, and a transistor. The individual implantation steps are utilized to create various structures and, as a result, the production process is substantially simplified.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.