Method of removing metallic contaminants from simox substrate
US5970366A · kind A · utility
12Cited by
6References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 16, 1997 |
| Grant date | Oct 19, 1999 |
| Priority date | — |
| Expiry date | Jul 16, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3221
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of forming a silicon substrate, a gettering film is formed on a bottom surface of a silicon substrate. An oxygen ion implantation into a top surface of the silicon substrate is carried out at a substrate temperature in the range of 400.degree. C.-700.degree. C. The gettering film is removed from the silicon substrate. The silicon substrate is subjected to a heat treatment at a temperature of not less than 1300.degree. C. for causing a reaction of oxygen and silicon to form a silicon oxide film in the silicon substrate after the gettering film is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.