Silicon IC contacts using composite TiN barrier layer
US5972179A · kind A · utility
70Cited by
6References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 30, 1997 |
| Grant date | Oct 26, 1999 |
| Priority date | — |
| Expiry date | Sep 30, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76856
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The specification describes a composite TiN barrier layer structure formed by depositing a first TiN layer by CVD to obtain good step coverage, followed by a second TiN layer formed by PVD to obtain uniform surface morphology for subsequent deposition of an aluminum alloy contact layer. Alternatively, uniform TiN layer morphology is obtained by depositing multiple CVD TiN layers as a series of thin strata, and passivating after each deposition step to fully crystallize each stratum thereby obtaining a uniformly crystallized barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.