Method of making flexible interconnections with dual-metal-dual-stud structure
US5972788A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 22, 1996 |
| Grant date | Oct 26, 1999 |
| Priority date | — |
| Expiry date | May 22, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/957
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal interconnect having a high conductivity and high resistance to metal migration failure is formed of two layers of metal or alloy (such as TI/CuAlSi) with a dielectric interposed therebetween and a connection made between the layers by a conductive material, preferably in the form of a plug or stud formed in an aperture of an inter-level dielectric, at ends of the interconnect. A high precision metal-to-metal capacitor can be formed from the same layers by forming separate connections to each of the layers. The topography of the interconnect (and capacitor) is of reduced severity and facilitates planarization of an overlying inter-level dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.