Process for reducing defects in oxide layers on silicon carbide
US5972801A · kind A · utility
119Cited by
4References
34Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 8, 1995 |
| Grant date | Oct 26, 1999 |
| Priority date | — |
| Expiry date | Nov 8, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is disclosed for obtaining improved oxide layers and resulting improved performance from oxide based devices. The method comprises exposing an oxide layer on a silicon carbide layer to an oxidizing source gas at a temperature below the temperature at which SiC would begin to oxidize at a significant rate, while high enough to enable the oxidizing source gas to diffuse into the oxide layer, and while avoiding any substantial additional oxidation of the silicon carbide, and for a time sufficient to densify the oxide layer and improve the interface between the oxide layer and the silicon carbide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.