Cleaning liquid for semiconductor devices
US5972862A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 1997 |
| Grant date | Oct 26, 1999 |
| Priority date | — |
| Expiry date | Jul 28, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is disclosed a cleaning liquid for producing a semiconductor device which comprises (A) fluorine-containing compound; (B) water-soluble or water-miscible organic solvent; and (C) inorganic acid and/or organic acid, optionally, further comprises (D) quaternary ammonium salt or (D') a specific organic carboxylic acid ammonium salt and/or an organic carboxylic acid amine salt; as well as a process for producing a semiconductor device by forming a resist pattern on a substrate equipped on the surface with an insulating film layer or a metallic electroconductive layer, forming a via hole or electric wiring by dry etching, removing the resist pattern by ashing treatment with oxygen plasma; and effecting an cleaning treatment with the above cleaning liquid. The above cleaning liquid and production process can readily remove the deposit polymer formed in the case of dry etching without impairing metallic film and insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.