High voltage integrated circuit
US5973366A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 24, 1997 |
| Grant date | Oct 26, 1999 |
| Priority date | — |
| Expiry date | Dec 24, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/761
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high voltage integrated circuit is provided which includes a first conductivity type semiconductor substrate, a first conductivity type isolation region that extends continuously from the first conductivity type semiconductor substrate, a substrate electrode formed on a surface of the first conductivity type isolation region, a second conductivity type island-like region that is formed on the first conductivity type semiconductor substrate, such that the entire periphery of the island-like region is surrounded by the first conductity type isolation region, and a plurality of high voltage MOSFETs that are connected to a common power source and operate independently of each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.