Capacitor on ultrathin semiconductor on insulator
US5973382A · kind A · utility
102Cited by
25References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 23, 1997 |
| Grant date | Oct 26, 1999 |
| Priority date | — |
| Expiry date | May 23, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6715
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit is provided which comprises: an insulating substrate; a semiconductor layer formed on the insulating substrate; a MOSFET including a source, drain and channel formed in the silicon layer and a gate adjacent to the channel; a gate terminal; and a conductor interconnecting the source and drain so as to maintain them at a common potential.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.