Semiconductor circuit device with high electrostatic breakdown endurance
US5973901A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 1997 |
| Grant date | Oct 26, 1999 |
| Priority date | — |
| Expiry date | Aug 1, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/60
Abstract
In a semiconductor circuit device, an internal circuit, a common wiring pattern, a plurality of external terminals including a ground terminal, and a plurality of protection elements is provided. Each of the plurality of protection elements is connected to one of the plurality of external terminals and the common wiring pattern. Each protection element includes a clamp circuit. The clamp circuit of each of the plurality of protection elements respectively connected to the plurality of external terminals other than the ground terminal has a clamp voltage higher than a power supply voltage supplied to the internal circuit. On the other hand, the clamp circuit of the protection element connected to the ground terminal as a ground terminal clamp circuit has a clamp voltage lower than those of the clamp circuits other than the ground terminal clamp circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.