Process for producing bismuth compounds, and bismuth compounds
US5976624A · kind A · utility
2Cited by
4References
1Claims
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Key dates
| Filing date | Aug 20, 1996 |
| Grant date | Nov 2, 1999 |
| Priority date | — |
| Expiry date | Aug 20, 2016 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2006/40
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The formation of an electrically conductive phase in an dielectric or ferroelectric composed of a bismuth compound is inhibited. Described is a process for producing a bismuth compound, which comprises introducing a gas of starting materials in an atmosphere under a pressure of 0.01 to 50 torr, depositing a precursor of a bismuth compound on a substrate, and thermally treating it in an oxidizing atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.