Takaaki Ami
22Patents
7h-index
26Co-inventors
69Inventor score
Filing activity: Mar 26, 1996 → Apr 17, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6400489B1 | Solid-state displacement element, optical element, and interference filter | Physics | 43 | Expired |
| US6610548B1 | CRYSTAL GROWTH METHOD OF OXIDE, CERIUM OXIDE, PROMETHIUM OXIDE, MULTI-LAYERED STRUCTURE OF OXIDES, MANUFACTURING METHOD OF FIELD EFFECT TRANSISTOR, MANUFACTURING METHOD OF FERROELECTRIC NON-VOLATILE MEMORY AND FERROELECTRIC NON-VOLATILE MEMORY | Electricity | 40 | Expired |
| US6577039B2 | Driving system and actuator | Mechanical Engineering; Lighting; Heating | 36 | Expired |
| US6143679A | Layered crystal structure oxide | Chemistry; Metallurgy | 19 | Expired |
| US6004392A | Ferroelectric capacitor and manufacturing the same using bismuth layered oxides | Electricity | 16 | Expired |
| US6114199A | Manufacturing method for ferroelectric film and nonvolatile memory using the same | Electricity | 14 | Expired |
| US7754504B2 | Light-emitting diode, method for making light-emitting diode, integrated light-emitting diode and method for making integrated light-emitting diode, method for growing a nitride-based III-V group compound semiconductor, light source cell unit, light-emitting diode | Electricity | 8 | Active |
| US6749686B2 | Crystal growth method of an oxide and multi-layered structure of oxides | Electricity | 7 | Expired |
| US6544857B1 | Dielectric capacitor manufacturing method and semiconductor storage device manufacturing method | Electricity | 6 | Expired |
| US6207082A | Layer-structured oxide and process of producing the same | Electricity | 4 | Expired |
| US6106616A | Layer crystal structure oxide, production method thereof, and memory element using the same | Chemistry; Metallurgy | 2 | Expired |
| US6171871A | Ferroelectric memory device and their manufacturing methods | Electricity | 2 | Expired |
| US5935549A | Method of producing bismuth layered compound | Chemistry; Metallurgy | 2 | Expired |
| US5976624A | Process for producing bismuth compounds, and bismuth compounds | Chemistry; Metallurgy | 2 | Expired |
| US9911894B2 | Nitride-based III-V group compound semiconductor | Electricity | 2 | Active |
| US6927436B1 | Crystal growth method of oxide, cerium oxide, promethium oxide, multi-layered structure of oxides, manufacturing method of field effect transistor, manufacturing method of ferroelectric non-volatile memory and ferroelectric non-volatile memory | Electricity | 1 | Expired |
| US8859401B2 | Method for growing a nitride-based III-V group compound semiconductor | Electricity | 1 | Active |
| US5904766A | Process for preparing bismuth compounds | Chemistry; Metallurgy | 0 | Expired |
| US6995069B2 | Dielectric capacitor manufacturing method and semiconductor storage device manufacturing method | Electricity | 0 | Expired |
| US6174463A | Layer crystal structure oxide, production method thereof and memory element using the same | Chemistry; Metallurgy | 0 | Expired |
| US6251360A | Method of producing bismuth layered compound | Chemistry; Metallurgy | 0 | Expired |
| US9034738B2 | Method for growing a nitride-based III-V Group compound semiconductor | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.