Localization of defects of a metallic layer of a semiconductor circuit
US5976898A · kind A · utility
12Cited by
4References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 20, 1996 |
| Grant date | Nov 2, 1999 |
| Priority date | — |
| Expiry date | Dec 20, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/311
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for locating possible defects on an opaque layer deposited on a production wafer of a semiconductor circuit, consisting in locally radiating an upper surface of the wafer by means of a laser, and detecting the occurrence of a current in a diode constituted by a PN junction placed under the opaque layer to be examined.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.