Michel Marty
63Patents
13h-index
64Co-inventors
87Inventor score
Filing activity: Nov 20, 1984 → Apr 17, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6031445A | Transformer for integrated circuits | Emerging Cross-Sectional Technologies | 176 | Expired |
| US6828646B2 | Isolating trench and manufacturing process | Electricity | 70 | Expired |
| US4593454A | Process for manufacturing an integrated circuit with tantalum silicide connections utilizing self-aligned oxidation | Emerging Cross-Sectional Technologies | 55 | Expired |
| US7038289B2 | Deep insulating trench | Electricity | 43 | Expired |
| US9640704B2 | High quantum efficiency photodetector | Electricity | 40 | Active |
| US6177717A | Low-noise vertical bipolar transistor and corresponding fabrication process | Electricity | 27 | Expired |
| US6265275A | Method of selectively doping the intrinsic collector of a vertical bipolar transistor with epitaxial base | Electricity | 22 | Expired |
| US5104614A | Superalloy compositions with a nickel base | Chemistry; Metallurgy | 21 | Expired |
| US4714951A | Integrated circuit device which includes a continous layer which consists of conducting portions which are of a silicide of a refractory metal and insulating portions which are of an oxide of the metal | Emerging Cross-Sectional Technologies | 21 | Expired |
| US6465317B2 | Process for producing a bipolar transistor with self-aligned emitter and extrinsic base | Electricity | 19 | Expired |
| US6081030A | Semiconductor device having separated exchange means | Electricity | 17 | Expired |
| US6316818A | Vertical bipolar transistor including an extrinsic base with reduced roughness, and fabrication process | Electricity | 16 | Expired |
| US6972451B2 | Trench capacitor in a substrate with two floating electrodes independent from the substrate | Electricity | 15 | Expired |
| US5976898A | Localization of defects of a metallic layer of a semiconductor circuit | Physics | 12 | Expired |
| US9520435B2 | Image sensor illuminated and connected on its back side | Electricity | 12 | Active |
| US6100595A | Semiconductor device having optoelectronic remote signal-exchange means | Electricity | 10 | Expired |
| US4601874A | Process for forming a titanium base alloy with small grain size by powder metallurgy | Chemistry; Metallurgy | 10 | Expired |
| US6136640A | Process for fabricating a metal-metal capacitor within an integrated circuit, and corresponding integrated circuit | Electricity | 10 | Expired |
| US6551891B1 | Process for fabricating a self-aligned vertical bipolar transistor | Electricity | 9 | Expired |
| US5486242A | Niobium or tantalum based high specific strength inter metallic compounds and alloys | Chemistry; Metallurgy | 8 | Expired |
| US7687833B2 | Component containing a baw filter | Electricity | 7 | Active |
| US6656812B1 | Vertical bipolar transistor having little low-frequency noise and high current gain, and corresponding fabrication process | Electricity | 7 | Expired |
| US8436440B2 | Method for forming a back-side illuminated image sensor | Electricity | 5 | Active |
| US9299865B2 | Spad photodiode of high quantum efficiency | Electricity | 5 | Active |
| US7456071B2 | Method for forming a strongly-conductive buried layer in a semiconductor substrate | Electricity | 5 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.