Ultrahigh vacuum deposition of silicon (Si-Ge) on HMIC substrates
US5976941A · kind A · utility
15Cited by
33References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 6, 1997 |
| Grant date | Nov 2, 1999 |
| Priority date | — |
| Expiry date | Jun 6, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/00
Abstract
The present invention presents a method in which semiconductor heterojunction and homojunction materials are selectively formed on silicon pedestals in an HMIC after the high temperature processing steps in fabricating the HMIC structure are completed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.