High efficiency photovoltaic device

US5977476A · kind A · utility

Assignee

• United Solar Systems Corporation · US

Inventors

• Subhendu Guha · Troy, US
• Chi C. Yang · Troy, US
• Xi Xiang Xu · Findlay, US

Key dates

• Filing date: Oct 16, 1996
• Grant date: Nov 2, 1999
• Expiry date: Oct 16, 2016

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/548

Abstract

An N-I-P type photovoltaic device includes a multi-layered body of N-doped semiconductor material which has an amorphous, N doped layer in contact with the amorphous body of intrinsic semiconductor material, and a microcrystalline, N doped layer overlying the amorphous, N doped material. A tandem device comprising stacked N-I-P cells may further include a second amorphous, N doped layer interposed between the microcrystalline, N doped layer and a microcrystalline P doped layer. Photovoltaic devices thus configured manifest improved performance, particularly when configured as tandem devices.