Multi-level conductive structure including low capacitance material

US5977635A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Dirk Tobben · Fishkill, US
• Peter Weigand · Unterhaching, DE

Key dates

• Filing date: Sep 29, 1997
• Grant date: Nov 2, 1999
• Expiry date: Sep 29, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for forming a multi-level conductive structure on an integrated circuit. The method includes forming a first conductive layer 108 and forming a first dielectric layer 112 above the first conductive layer. The method further includes forming a second conductive layer 302 above the first dielectric layer. There is also included etching through the second conductive layer and at least partially into the first dielectric layer to form a trench 706 in the second conductive layer and the first dielectric layer, thereby removing at least a portion of the dielectric layer and forming a first conductive line 503 and a second conductive line 505 in the second conductive layer. Further, the method includes depositing a low capacitance material 908 into the trench. The low capacitance material represents a material having a dielectric constant lower than a dielectric constant of the first dielectric layer.