Long wavelength vertical cavity surface emitting laser
US5978398A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 1997 |
| Grant date | Nov 2, 1999 |
| Priority date | — |
| Expiry date | Jul 31, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34306
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A VCSEL for emitting long wavelength light including a GaAs substrate element, a first mirror stack with mirror pairs in a GaAs/AlGaAs material system lattice matched to a GaInAsN active region. The active region including an active structure sandwiched between a first cladding region adjacent the first mirror stack, and a second cladding region. The first and second cladding regions including an AlGaAs/GaAs material system. The active structure including a nitride based quantum well and a GaAsP barrier layer. A second mirror stack is lattice matched to the second cladding region and has mirror pairs in a GaAs/AlGaAs material system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.