Method of forming local interconnection of a static random access memory
US5979784A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 17, 1997 |
| Grant date | Nov 9, 1999 |
| Priority date | — |
| Expiry date | Apr 17, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B10/12
Abstract
A method of forming local interconnection of a SRAM, including the following steps: First, an NMOS and a PMOS are formed on a P-well and an N-well on a substrate, respectively. An isolation oxide layer is formed and the isolation oxide layer on a node is removed. A thin polysilicon layer is formed and N+ shallow implantation and N+ deep implantation is performed by using a photolithography technique. Also, P+ shallow implantation and P+ deep implantation are performed by using a photolithography technique. After the formation of a low resistance material, the low resistance material and the thin polysilicon layer are together formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.