Method of manufacturing thin film and method for performing precise working by radical control and apparatus for carrying out such methods
US5980999A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 1996 |
| Grant date | Nov 9, 1999 |
| Priority date | — |
| Expiry date | Mar 28, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/302
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A first reactive gas is introduced into a vacuum chamber and a plasma of the thus introduced reactive gas is produced. A second reactive gas is introduced into a radical generating chamber and is dissociated to generate radicals whose density and composition are well controlled. Then, the thus generated radicals are injected into the plasma generated within the vacuum chamber such that an amount of a desired kind of radicals within the plasma is selectively increased or decreased. In this manner, a thin film having an excellent property can be deposited on a substrate placed in the vacuum chamber. Alternatively, a surface of a substrate placed in the vacuum chamber can be processed precisely and selectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.