Method for forming a resist pattern
US5981150A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 3, 1997 |
| Grant date | Nov 9, 1999 |
| Priority date | — |
| Expiry date | Jul 3, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for forming a resist pattern which allows a closest pattern to be formed thus solving a problem of misalignment. A substrate has, on the surface thereof, first and second domains having different reflectivity to first light. A resist covers the first and second domains. The first light illuminates the resist and reflects from the surfaces of the first and second domains. A resist pattern forms in the fashion of self-alignment based on the illuminated and reflected light. The sum of the exposure of the illuminated and reflected light is set above a threshold of exposure by which the resist is sensitized in the first domain and set below the threshold of exposure in the second domain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.