Single feature size MOS technology power device
US5981998A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 29, 1996 |
| Grant date | Nov 9, 1999 |
| Priority date | — |
| Expiry date | Oct 29, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/155
Abstract
A MOS technology power device comprises a semiconductor material layer of a first conductivity type, a conductive insulated gate layer covering the semiconductor material layer, and a plurality of elementary functional units. The conductive insulated gate layer includes a first insulating material layer placed above the semiconductor material layer, a conductive material layer placed above the first insulating material layer, and a second insulating material layer placed above the conductive material layer. Each elementary functional unit includes an elongated body region of a second conductivity type formed in the semiconductor material layer. Each elementary functional unit further includes an elongated window in the insulated gate layer extending above the elongated body region. Each elongated body region includes a source region doped with dopants of the first conductivity type, intercalated with a portion of the elongated body region wherein no dopant of the first conductivity type are provided. The MOS technology power device further includes a plurality of insulating material sidewall spacers disposed above the semiconductor material layer along elongated edges of each elong…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.