Conductive oxide films
US5982034A · kind A · utility
11Cited by
3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 19, 1993 |
| Grant date | Nov 9, 1999 |
| Priority date | — |
| Expiry date | Nov 19, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N60/0632
Abstract
Thin films of isotropically conductive material are formed from Sr.sub.1-x Ca.sub.x RuO.sub.3. This material is easily deposited as a thin film by methods such as 90.degree. off-axis sputtering and laser ablation. The materials are epitaxially deposited on a wide variety of substrates and allow overlying epitaxial growth of an equally large number of significant oxides such as superconducting oxides, dielectric, and ferroelectric materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.