Multiple-wavelength laser diode array using quantum well band filling
US5982799A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 1997 |
| Grant date | Nov 9, 1999 |
| Priority date | — |
| Expiry date | Mar 17, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4087
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A multiple-wavelength laser diode array is described. A wavelength span of several tens of nanometers is achieved through band-filling of a quantum well active region. A multiple-wavelength array is formed by selectively introducing different amounts of optical loss into the array elements, to affect the threshold current density. With minimum losses, the laser oscillates at a long wavelength, while an element with high loss will undergo more bandfilling and be forced to emit at a shorter wavelength. To illustrate the structures which incorporate these additional, selective losses, a 2-red-wavelength AlGaInP laser array is described. In preferred embodiments, increased optical loss is achieved in an SBR type laser by narrowing the ridge region, or by reducing its thickness. In another type of laser, increased optical loss is achieved by a very thin upper cladding layer causing increased optical absorption in a close overlying cap or metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.