Membrane mask for projection lithography
US5985493A · kind A · utility
3Cited by
2References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 8, 1998 |
| Grant date | Nov 16, 1999 |
| Priority date | — |
| Expiry date | Apr 8, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/20
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An improved, scattering-type mask for use in a charged-particle beam lithography process comprises the mask having a membrane portion and a scattering portion, the membrane portion being fabricated with a conductive material or a plurality of materials in which one of them is conductive. The conductive nature of the membrane portion mitigates the accumulation of charge in the mask, thereby enhancing the definition of the charged-particle pattern transferred from the mask onto the wafer under fabrication and reducing the distortion obtained with the system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.