Photoresist composition
US5985511A · kind A · utility
5Cited by
8References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 12, 1996 |
| Grant date | Nov 16, 1999 |
| Priority date | — |
| Expiry date | Dec 12, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/125
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A positive photoresist composition having excellent various performances (e.g. resolution, resistance to time delay effect, profile), small PEB dependence as well as excellent sensitivity, film retention and coatability, which comprises a polyvinylphenol resin whose phenolic hydroxyl group is partially protected; a sulfonate of a N-hydroxyimide compound as an acid generator; an amine compound; and an electron donor having a redox potential of not more than 1.7 eV is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.