Method of forming a capacitor of a semiconductor device
US5985730A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 11, 1998 |
| Grant date | Nov 16, 1999 |
| Priority date | — |
| Expiry date | Jun 11, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
Abstract
The present invention relates to a method of forming a capacitor of a semiconductor device, which specially treats the surface of a charge storage electrode of the lower in order to improve the poor stepcoverage of the Ta.sub.2 O.sub.5 film deposited by the PECVD method in the capacitor using the Ta.sub.2 O.sub.5 film having a specific dielectric constant as the dielectric film, prevents the leakage current from generating according to improving the electrical characteristic of the capacitor by depositing the Ta.sub.2 O.sub.5 film by use of the LPCVD method where the stepcoverage is excellent, and improves the characteristic of the semiconductor device and the trust according to the result.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.