Method for forming field oxide of semiconductor device using wet and dry oxidation
US5985738A · kind A · utility
8Cited by
14References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 28, 1997 |
| Grant date | Nov 16, 1999 |
| Priority date | — |
| Expiry date | Oct 28, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76202
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a field oxide of a semiconductor device is disclosed, which takes advantage of wet oxidation at an early stage of field oxidation to prevent the ungrowth of field oxide and dry oxidation at a later stage of field oxidation to make the slope of field oxide positive, thereby improving the production yield and the reliability of semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.