Method of manufacturing a semiconductor device including reduction of a catalyst
US5985740A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 16, 1997 |
| Grant date | Nov 16, 1999 |
| Priority date | — |
| Expiry date | Jan 16, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6739
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Concentration of metal element which promotes crystallization of silicon and which exists within a crystal silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is implemented after introducing nickel element to an amorphous silicon film 103. Then, after obtaining the crystal silicon film, another heat treatment is implemented within an oxidizing atmosphere at a temperature higher than that of the previous heat treatment. At this time, HCl or the like is added to the atmosphere. A thermal oxide film 106 is formed in this step. At this time, gettering of the nickel element into the thermal oxide film 106 takes place. Next, the thermal oxide film 106 is removed. Thereby, a crystal silicon film 107 having low concentration of the metal element and a high crystallinity can be obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.