Method of making a semiconductor device using chemical-mechanical polishing having a combination-step process
US5985748A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 1, 1997 |
| Grant date | Nov 16, 1999 |
| Priority date | — |
| Expiry date | Dec 1, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7684
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of chemical-mechanical polishing of a semiconductor device utilizes a combination of polishing steps, including a first step using a first slurry containing an abrasive component (i.e., mechanical component) and a chemical component (i.e., chemical reactants), and a second polishing step using a second slurry having a reduced amount of the abrasive component. The method is carried out with respect to metal (39), such as copper, deposited on a dielectric layer (34) and the first polishing step is stopped before the entirety of the metal overlying the dielectric layer is removed. In one embodiment, the second slurry has no abrasive component.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.