MBE system and semiconductor device fabricated, using same
US5989339A · kind A · utility
6Cited by
5References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 13, 1995 |
| Grant date | Nov 23, 1999 |
| Priority date | — |
| Expiry date | Sep 13, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02562
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A molecular beam epitaxy system having a plurality of chambers which contain at least a first chamber and a second chamber. The first chamber is used to form II-VI column compound semiconductor layers not containing Te. The second chamber is used to form II-VI column compound semiconductor layers containing at least Te. A semiconductor device having an ohmic characteristics can be fabricated without mixing Te into other layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.