Method of forming a cadmium telluride/silicon structure
US5989933A · kind A · utility
7Cited by
4References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 17, 1997 |
| Grant date | Nov 23, 1999 |
| Priority date | — |
| Expiry date | Sep 17, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
In one embodiment, a semiconductor structure is disclosed. The structure includes both a silicon and a cadmium telluride layer. Each may have a (100) lattice orientation. A plurality of buffer layers are disposed between the silicon layer and the cadmium telluride layer. Each of these buffer layers has a lattice constant which is greater than the lattice constant of the layer below it and less than the lattice constant of the layer above it. As examples, these buffer layers may comprise zinc sulfide, zinc selenide, zinc telluride or zinc tellurium selenide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.