Method of manufacturing SOI substrate
US5989981A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 2, 1997 |
| Grant date | Nov 23, 1999 |
| Priority date | — |
| Expiry date | Jul 2, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3226
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing an SOI substrate uses an SOI substrate having a first single-crystal silicon layer, an insulating layer formed on the first single-crystal silicon layer, and a second single-crystal silicon layer formed on the insulating layer. The surface of the second single-crystal silicon layer is thermally oxidized. The second single-crystal silicon layer is controlled to have a predetermined thickness by removing the thermally oxidized surface. This step controlling the second single-crystal silicon layer to have a predetermined thickness includes the step of eliminating, by annealing, a stacking fault formed by the thermal oxidation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.