Semiconductor device and method of manufacturing the same
US5989988A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 16, 1998 |
| Grant date | Nov 23, 1999 |
| Priority date | — |
| Expiry date | Nov 16, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon region partitioned by insulating films is formed on a main surface of a substrate. A mixed film of first and second metals is formed directly or indirectly on the substrate having the silicon region formed thereon. Then, a heat treatment is applied to permit the first and second metals to react with silicon in the silicon region so as to form selectively a first silicide film on the surface of the silicon region. Further, the first silicide film is subjected to a heat treatment under a nitriding atmosphere so as to form a second silicide film consisting essentially of the first metal and silicon on the surface of the silicon region and a nitride film consisting essentially of the second metal and nitrogen on the surface of the second silicide film or both on the surface and at the crystal grain boundary of the second silicide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.