Toshihiko Iinuma
38Patents
11h-index
38Co-inventors
75Inventor score
Filing activity: Mar 15, 1994 → Mar 4, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6054355A | Method of manufacturing a semiconductor device which includes forming a dummy gate | Emerging Cross-Sectional Technologies | 212 | Expired |
| US6376888B1 | Semiconductor device and method of manufacturing the same | Electricity | 83 | Expired |
| US10147736B2 | Semiconductor memory device and method for manufacturing same | Electricity | 77 | Active |
| US6515338B1 | Semiconductor device and manufacturing method therefor | Emerging Cross-Sectional Technologies | 48 | Expired |
| US5989988A | Semiconductor device and method of manufacturing the same | Electricity | 48 | Expired |
| US6570217B1 | Semiconductor device and method of manufacturing the same | Electricity | 46 | Expired |
| US6664592B2 | Semiconductor device with groove type channel structure | Emerging Cross-Sectional Technologies | 33 | Expired |
| US7091114B2 | Semiconductor device and method of manufacturing the same | Electricity | 22 | Expired |
| US6465823B1 | Dynamic threshold voltage metal insulator semiconductor effect transistor | Emerging Cross-Sectional Technologies | 15 | Expired |
| US6924518B2 | Semiconductor device and method of manufacturing the same | Electricity | 14 | Expired |
| US8633535B2 | Nonvolatile semiconductor memory | Electricity | 12 | Active |
| US5510647A | Semiconductor device and method of manufacturing the same | Electricity | 11 | Expired |
| US7372108B2 | Semiconductor device and manufacturing method thereof | Electricity | 9 | Active |
| US6794720B2 | Dynamic threshold voltage metal insulator field effect transistor | Emerging Cross-Sectional Technologies | 6 | Expired |
| US8569825B2 | Nonvolatile semiconductor storage device | Electricity | 5 | Active |
| US8101974B2 | Semiconductor device and manufacturing method thereof | Electricity | 4 | Active |
| US6770942B2 | Semiconductor device having silicide film formed in a part of source-drain diffusion layers and method of manufacturing the same | Electricity | 4 | Expired |
| US7078345B2 | Method for manufacturing a semiconductor device | Electricity | 4 | Expired |
| US7741220B2 | Semiconductor device and manufacturing method thereof | Electricity | 3 | Active |
| US6893928B2 | Semiconductor device and method of manufacturing the same | Electricity | 3 | Expired |
| US9412754B1 | Semiconductor memory device and production method thereof | Electricity | 3 | Active |
| US9153656B2 | NAND type nonvolatile semiconductor memory device and method for manufacturing same | Electricity | 3 | Active |
| US5637909A | Semiconductor device and method of manufacturing the same | Electricity | 3 | Expired |
| US9613979B2 | Semiconductor memory device and method of manufacturing the same | Electricity | 3 | Active |
| US7902030B2 | Manufacturing method for semiconductor device and semiconductor device | Electricity | 2 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.