In situ wafer cleaning process
US5990014A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 7, 1998 |
| Grant date | Nov 23, 1999 |
| Priority date | — |
| Expiry date | Jan 7, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/974
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A low pressure in situ wafer cleaning process and apparatus are disclosed wherein a low pressure external combustion reactor 2 in combination with a low pressure furnace 14 produces a stream of a combustion product through the combustion of a halogenated hydrocarbon and oxygen. The combustion product is contacted with semiconductor wafers in the low pressure furnace to remove Group I and II metals. After a sufficient time has passed for cleaning, the combustion reactor and furnace are purged with an inert gas to remove the combustion product. In a preferred embodiment, the halogenated hydrocarbon is trans-1,2-dichloroethylene and the combustion product is vaporous hydrochloric acid.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.