Oxide etching process using nitrogen plasma
US5990018A · kind A · utility
2Cited by
2References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 11, 1996 |
| Grant date | Nov 23, 1999 |
| Priority date | — |
| Expiry date | Sep 11, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is a method for improviding an oxide etching process by using a nitrogen-based plasma. An additional nitrogen-based plasma step is used to inhibit or delay the formation of observed residual bubbles during a dry etching process. The method comprises the steps of etching the oxide layer by reactive ion etching and immersing the oxide layer in a nitrogen plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.