Inventor · Hsinchu, TW

Tzu-Shih Yen

24Patents
11h-index
22Co-inventors
71Inventor score

Filing activity: Aug 26, 1996 → Mar 3, 2014

Most-cited inventions

PatentTitleAreaCited byStatus
US5688713A Method of manufacturing a DRAM cell having a double-crown capacitor using polysilicon and nitride spacers Emerging Cross-Sectional Technologies 152 Expired
US5895740A Method of forming contact holes of reduced dimensions by using in-situ formed polymeric sidewall spacers Electricity 100 Expired
US5780338A Method for manufacturing crown-shaped capacitors for dynamic random access memory integrated circuits Electricity 72 Expired
US6037216A Method for simultaneously fabricating capacitor structures, for giga-bit DRAM cells, and peripheral interconnect structures, using a dual damascene process Electricity 65 Expired
US5904154A Method for removing fluorinated photoresist layers from semiconductor substrates Electricity 62 Expired
US8685825B2 Replacement source/drain finFET fabrication Electricity 24 Active
US5962195A Method for controlling linewidth by etching bottom anti-reflective coating Electricity 23 Expired
US6124192A Method for fabricating ultra-small interconnections using simplified patterns and sidewall contact plugs Electricity 22 Expired
US6235621A Method for forming a semiconductor device Electricity 17 Expired
US6265296A Method for forming self-aligned contacts using a hard mask Electricity 14 Expired
US6376384B1 Multiple etch contact etching method incorporating post contact etch etching Emerging Cross-Sectional Technologies 12 Expired
US6306759A Method for forming self-aligned contact with liner Electricity 10 Expired
US6140240A Method for eliminating CMP induced microscratches Electricity 9 Expired
US9209278B2 Replacement source/drain finFET fabrication Electricity 8 Active
US6278189A High density integrated circuits using tapered and self-aligned contacts Electricity 7 Expired
US5994228A Method of fabricating contact holes in high density integrated circuits using taper contact and self-aligned etching processes Electricity 6 Expired
US8871584B2 Replacement source/drain finFET fabrication Electricity 6 Active
US6136661A Method to fabricate capacitor structures with very narrow features using silyated photoresist Electricity 6 Expired
US5899747A Method for forming a tapered spacer Electricity 5 Expired
US7457154B2 High density memory array system Electricity 4 Active
US9159810B2 Doping a non-planar semiconductor device Electricity 4 Active
US9006065B2 Plasma doping a non-planar semiconductor device Electricity 2 Active
US5990018A Oxide etching process using nitrogen plasma Electricity 2 Expired
US6423646B1 Method for removing etch-induced polymer film and damaged silicon layer from a silicon surface Chemistry; Metallurgy 2 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.