High pressure/high temperature process chamber
US5990453A · kind A · utility
4Cited by
9References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 2, 1997 |
| Grant date | Nov 23, 1999 |
| Priority date | — |
| Expiry date | Dec 2, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67109
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved processing chamber is provided that withstands numerous high pressure/high temperature processing cycles without heater breakage. The processing chamber contains a high conductivity, a high emissivity and/or a high transmissivity shield positioned in sufficient proximity to a heater to prohibit gas currents such as convection current loops from forming between the shield and the heater. The shield is preferably a thin anodized metal or a sapphire sheet.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.