Semiconductor light-emitting element and method for manufacturing the same
US5990495A · kind A · utility
71Cited by
3References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 18, 1996 |
| Grant date | Nov 23, 1999 |
| Priority date | — |
| Expiry date | Jul 18, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
Abstract
A semiconductor light-emitting element comprising a monocrystal substrate; a buffer layer formed directly on the monocrystal substrate and comprising a monocrystal Al.sub.x Ga.sub.1-x N layer (0<x<1); and element-forming layer formed on the buffer layer and comprising Al.sub.x Ga.sub.y In.sub.1-x-y N (0.ltoreq.x+Y.ltoreq.1, 0.ltoreq.x, Y.ltoreq.1). The half-value width of an X-ray rocking curve of the buffer layer should preferably be 5 minutes or less, more preferably 90 seconds or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.