Local row decoder and associated control logic for fowler-nordheim tunneling based flash memory
US5991198A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 2, 1998 |
| Grant date | Nov 23, 1999 |
| Priority date | — |
| Expiry date | Apr 2, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/08
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor non-volatile memory device is disclosed which is based on the use of Fowler-Nordheim electron tunneling to charge and discharge the isolated gates of the storage cells. Furthermore, the disclosed memory device includes global decoder circuitry capable of passing either positive or negative voltages to a set of global word lines controlling-local decoder circuitry, said local controller circuitry in turn controlling row select lines or local word lines. Each local decoder controls a multiplicity of word lines. The local decoder circuitry is located in physical proximity to specific memory sectors thus resulting in an improved layout of the decoder circuitry and enabling the selection of one of the multiplicity of word lines within said sector by means of electrical control lines. The electrical control lines select one of the multiplicity of rows within a memory sector and deselect all the remaining rows. Logic control circuitry is provided to control the logic of the local row decoders.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.