NexFlash Technologies, Inc.
19Patents
0Active
19Granted
31Portfolio score
Filing activity: Sep 25, 1997 → Apr 22, 2003
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6873004B1 | Virtual ground single transistor memory cell, memory array incorporating same, and method of operation thereof | Physics | 75 | Expired |
| US6175517A | Insertble and removable digital memory apparatus | Emerging Cross-Sectional Technologies | 69 | Expired |
| US6826080B2 | Virtual ground nonvolatile semiconductor memory array architecture and integrated circuit structure therefor | Physics | 54 | Expired |
| US6005810A | Byte-programmable flash memory having counters and secondary storage for disturb control during program and erase operations | Physics | 39 | Expired |
| US6847550B2 | Nonvolatile semiconductor memory having three-level memory cells and program and read mapping circuits therefor | Physics | 38 | Expired |
| US6771541B1 | Method and apparatus for providing row redundancy in nonvolatile semiconductor memory | Physics | 32 | Expired |
| US6747899B2 | Method and apparatus for multiple byte or page mode programming of a flash memory array | Physics | 32 | Expired |
| US5973374A | Flash memory array having well contact structures | Electricity | 30 | Expired |
| US6026007A | Insertable and removable high capacity digital memory apparatus and methods of operation thereof | Emerging Cross-Sectional Technologies | 29 | Expired |
| US6731544B2 | Method and apparatus for multiple byte or page mode programming of a flash memory array | Physics | 23 | Expired |
| US6775184B1 | Nonvolatile memory integrated circuit having volatile utility and buffer memories, and method of operation thereof | Physics | 23 | Expired |
| US6909639B2 | Nonvolatile memory having bit line discharge, and method of operation thereof | Physics | 20 | Expired |
| US5978275A | Erase and program control state machines for flash memory | Physics | 19 | Expired |
| US5991198A | Local row decoder and associated control logic for fowler-nordheim tunneling based flash memory | Physics | 18 | Expired |
| US6031777A | Fast on-chip current measurement circuit and method for use with memory array circuits | Physics | 13 | Expired |
| US5973961A | Divided bit line system for non-volatile memory devices | Physics | 13 | Expired |
| US6768671B1 | Nonvolatile memory and method of operation thereof to control erase disturb | Physics | 6 | Expired |
| US6171907A | Method for fabricating tunnel window in EEPROM cell with reduced cell pitch | Electricity | 4 | Expired |
| US6728140B2 | Threshold voltage convergence | Physics | 1 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.