Method for calibrating the temperature of an epitaxy reactor
US5994676A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 30, 1997 |
| Grant date | Nov 30, 1999 |
| Priority date | — |
| Expiry date | Jan 30, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for calibrating the temperature of an epitaxy reactor includes the steps of preparing a reference wafer having undergone on at least one of its surfaces an implant of a doping followed by an activation annealing to form a diffused layer; measuring the sheet resistance of the diffused layer at one point on the surface of the wafer; placing the reference wafer in the epitaxy reactor, the reactor being set at a desired temperature and having a neutral gas flowing therein; and measuring the sheet resistance at the same point and calculating the difference between the two values of sheet resistance, this difference representing the thermal cycle undergone by the reference wafer during its stay in the epitaxy reactor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.